Performance of normally off hydrogen-terminated diamond field-effect transistor with Al2O3/CeB6 gate materials
Zhang Minghui; Wang Wei; Chen Genqiang; Xie Rui; Wen Feng; Lin Fang; Wang Yanfeng; Zhang Pengfei; Wang Fei; He Shi; Liang Yuesong; Fan Shuwei; Wang Kaiyue; Yu Cui; Min Tai; Wang Hongxing
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0185805
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Cite this source
Zhang Minghui; Wang Wei; Chen Genqiang; Xie Rui; Wen Feng; Lin Fang; Wang Yanfeng; Zhang Pengfei; Wang Fei; He Shi; Liang Yuesong; Fan Shuwei; Wang Kaiyue; Yu Cui; Min Tai; Wang Hongxing. Performance of normally off hydrogen-terminated diamond field-effect transistor with Al2O3/CeB6 gate materials. Journal of Applied Physics. 2024-03-25. https://doi.org/10.1063/5.0185805