An 800V ultra-low loss field-stop insulated gate bipolar transistor with extended polysilicon gate structure
Chunping Tang; Baoxing Duan; Yintang Yang
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Microelectronics Journal
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.mejo.2023.106057
The original publisher provides the full text and its access options.
Cite this source
Chunping Tang; Baoxing Duan; Yintang Yang. An 800V ultra-low loss field-stop insulated gate bipolar transistor with extended polysilicon gate structure. Microelectronics Journal. 2024-01. https://doi.org/10.1016/j.mejo.2023.106057