Capacitorless Two‐Transistor Dynamic Random‐Access Memory Cells Comprising Amorphous Indium–Tin–Gallium–Zinc Oxide Thin‐Film Transistors for the Multiply–Accumulate Operation
Seungho Ryu; Mingu Kang; Kyoungah Cho; Sangsig Kim
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Materials Technologies
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/admt.202302209
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Cite this source
Seungho Ryu; Mingu Kang; Kyoungah Cho; Sangsig Kim. Capacitorless Two‐Transistor Dynamic Random‐Access Memory Cells Comprising Amorphous Indium–Tin–Gallium–Zinc Oxide Thin‐Film Transistors for the Multiply–Accumulate Operation. Advanced Materials Technologies. 2024-05-09. https://doi.org/10.1002/admt.202302209