Temperature Dependencies of the Breakdown Voltage of a High-Voltage SOI LDMOS Transistor
A. S. Novoselov; M. R. Gusev; N. V. Masal’skii
- Published
- Publisher
- Pleiades Publishing Ltd
- Journal / collection
- Russian Microelectronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1134/s1063739724600547
The original publisher provides the full text and its access options.
Cite this source
A. S. Novoselov; M. R. Gusev; N. V. Masal’skii. Temperature Dependencies of the Breakdown Voltage of a High-Voltage SOI LDMOS Transistor. Russian Microelectronics. 2024-10. https://doi.org/10.1134/s1063739724600547