TCAD simulation methodology of total ionizing dose effects for PDSOI transistor with a hump characteristic
J. Lomonaco; N. Rostand; S. Martinie; A. Bournel
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Solid-State Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.sse.2023.108813
The original publisher provides the full text and its access options.
Cite this source
J. Lomonaco; N. Rostand; S. Martinie; A. Bournel. TCAD simulation methodology of total ionizing dose effects for PDSOI transistor with a hump characteristic. Solid-State Electronics. 2024-01. https://doi.org/10.1016/j.sse.2023.108813