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Research literature / Conference paper

Gate-All-Around Silicon Nanowire Field Effect Transistor Behavior at High Gate Voltages

Reza Nekovei; Daryoush Shiri; Amit Verma

Published
Publisher
IEEE
Journal / collection
2024 IEEE 14th International Conference Nanomaterials: Applications & Properties (NAP)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/nap62956.2024.10739711

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Reza Nekovei; Daryoush Shiri; Amit Verma. Gate-All-Around Silicon Nanowire Field Effect Transistor Behavior at High Gate Voltages. 2024 IEEE 14th International Conference Nanomaterials: Applications & Properties (NAP). 2024-09-08. https://doi.org/10.1109/nap62956.2024.10739711

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