Back‐Bias Effects in a SiGe Nanosheet Transistor with Multiple Independent Gates
Christoph Beyer; Niladri Bhattacharjee; Thomas Mikolajick; Jens Trommer
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Materials Technologies
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/admt.202401391
The original publisher provides the full text and its access options.
Cite this source
Christoph Beyer; Niladri Bhattacharjee; Thomas Mikolajick; Jens Trommer. Back‐Bias Effects in a SiGe Nanosheet Transistor with Multiple Independent Gates. Advanced Materials Technologies. 2024-11-23. https://doi.org/10.1002/admt.202401391