Gate-tunable high-responsivity photodiode based on 2D ambipolar semiconductor
Wentao 文韬 Yu 于; Long 龙 Zhao 赵; Yanfei 延飞 Gao 高; Shiping 石平 Gao 高; Yuekun 悦昆 Yang 杨; Chen 晨 Pan 潘; Shi-Jun 世军 Liang 梁; Bin 斌 Cheng 程
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Chinese Physics B
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1674-1056/ad9c44
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Cite this source
Wentao 文韬 Yu 于; Long 龙 Zhao 赵; Yanfei 延飞 Gao 高; Shiping 石平 Gao 高; Yuekun 悦昆 Yang 杨; Chen 晨 Pan 潘; Shi-Jun 世军 Liang 梁; Bin 斌 Cheng 程. Gate-tunable high-responsivity photodiode based on 2D ambipolar semiconductor. Chinese Physics B. 2025-01-01. https://doi.org/10.1088/1674-1056/ad9c44