P-GaN/p-AlGaN/AlGaN/GaN Heterojunction Field-Effect Transistor With a Threshold Voltage of 6 V
Dong-Guk Kim; Jun-Hyeok Yim; Min-Keun Lee; Myeong-Su Chae; Hyungtak Kim; Ho-Young Cha
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Electron Device Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/led.2024.3391619
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Cite this source
Dong-Guk Kim; Jun-Hyeok Yim; Min-Keun Lee; Myeong-Su Chae; Hyungtak Kim; Ho-Young Cha. P-GaN/p-AlGaN/AlGaN/GaN Heterojunction Field-Effect Transistor With a Threshold Voltage of 6 V. IEEE Electron Device Letters. 2024-06. https://doi.org/10.1109/led.2024.3391619