Theoretical prediction of C- and O-doped Hittorf’s violet phosphorene as bipolar magnetic semiconductor material
Yi-Lin Lu; Sheng-Jie Dong; Fang-Chao Cui; Kai-Cheng Zhang; Chun-Mei Liu; Jie-Sen Li; Zhuo Mao; Institute of Ocean, College of Physical Science and Technology, Bohai University, Jinzhou 121007, China; Faculty of Electronic Information Engineering, Guangdong Baiyun University, Guangzhou 510450, China; College of Food Science and Engineering, Bohai University, Jinzhou 121007, China; School of Environment and Chemical Engineering, Foshan University, Foshan 528000, China; Peking Union Medical College, Chinese Academy of Medical Sciences, Tianjin 300192, China
- Published
- Publisher
- Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
- Journal / collection
- Acta Physica Sinica
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.7498/aps.73.20231279
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Cite this source
Yi-Lin Lu; Sheng-Jie Dong; Fang-Chao Cui; Kai-Cheng Zhang; Chun-Mei Liu; Jie-Sen Li; Zhuo Mao; Institute of Ocean, College of Physical Science and Technology, Bohai University, Jinzhou 121007, China; Faculty of Electronic Information Engineering, Guangdong Baiyun University, Guangzhou 510450, China; College of Food Science and Engineering, Bohai University, Jinzhou 121007, China; School of Environment and Chemical Engineering, Foshan University, Foshan 528000, China; Peking Union Medical College, Chinese Academy of Medical Sciences, Tianjin 300192, China. Theoretical prediction of C- and O-doped Hittorf’s violet phosphorene as bipolar magnetic semiconductor material. Acta Physica Sinica. 2024. https://doi.org/10.7498/aps.73.20231279