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Research literature / Conference paper

Electrically Erasable Oxide-Semiconductor-Channel Charge Trap Flash Memory with Unipolar Operation

Seongmin Park; Chanyeong Go; Changmin Jeon; Yoonyoung Chung

Published
Publisher
IEEE
Journal / collection
2024 IEEE International Electron Devices Meeting (IEDM)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/iedm50854.2024.10873516

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Seongmin Park; Chanyeong Go; Changmin Jeon; Yoonyoung Chung. Electrically Erasable Oxide-Semiconductor-Channel Charge Trap Flash Memory with Unipolar Operation. 2024 IEEE International Electron Devices Meeting (IEDM). 2024-12-07. https://doi.org/10.1109/iedm50854.2024.10873516

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