A Novel Transistor Free Design of SOT-MRAM Written by Unipolar Current with Record Bit Cell Size (15F 2 )
Meiyin Yang; Lei Zhao; Bowen Yang; Bowen Shen; Yanru Li; Peiyue Yu; Jianfeng Gao; Ruipeng Shi; Zhuangzhuang Ye; Shuo Xu; Yan Cui; Xiaolei Yang; Ming Wang; Shikun He; Kaiming Cai; Jun Luo
- Published
- Publisher
- IEEE
- Journal / collection
- 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/edtm61175.2025.11040438
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Cite this source
Meiyin Yang; Lei Zhao; Bowen Yang; Bowen Shen; Yanru Li; Peiyue Yu; Jianfeng Gao; Ruipeng Shi; Zhuangzhuang Ye; Shuo Xu; Yan Cui; Xiaolei Yang; Ming Wang; Shikun He; Kaiming Cai; Jun Luo. A Novel Transistor Free Design of SOT-MRAM Written by Unipolar Current with Record Bit Cell Size (15F 2 ). 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). 2025-03-09. https://doi.org/10.1109/edtm61175.2025.11040438