Mole Fraction-Based Approach for Sensitivity Analysis of Dual Material Control Gate Polarity Controlled Tunnel Field Effect Transistor for Applications in Biomedical Engineering
Maturkar Shreyanshi; Sangeedh; Kaushal Kumar Nigam; Ajay Singh Raghuvanshi; Dharmender
- Published
- Publisher
- World Scientific Pub Co Pte Ltd
- Journal / collection
- Journal of Circuits, Systems and Computers
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1142/s0218126624502062
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Cite this source
Maturkar Shreyanshi; Sangeedh; Kaushal Kumar Nigam; Ajay Singh Raghuvanshi; Dharmender. Mole Fraction-Based Approach for Sensitivity Analysis of Dual Material Control Gate Polarity Controlled Tunnel Field Effect Transistor for Applications in Biomedical Engineering. Journal of Circuits, Systems and Computers. 2024-02-14. https://doi.org/10.1142/s0218126624502062