Demonstration of Ferroelectric Tunnel Field-Effect Transistor for Low Power Synapse Device
Seungwon Go; Sunwoo Lee; Jaekyun Son; Dong Keun Lee; Hyungju Noh; Jae Yeon Park; Seonggeun Kim; Hyunho Ahn; Sihyun Kim; Sangwan Kim
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Nanotechnology
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/tnano.2025.3595532
The original publisher provides the full text and its access options.
Cite this source
Seungwon Go; Sunwoo Lee; Jaekyun Son; Dong Keun Lee; Hyungju Noh; Jae Yeon Park; Seonggeun Kim; Hyunho Ahn; Sihyun Kim; Sangwan Kim. Demonstration of Ferroelectric Tunnel Field-Effect Transistor for Low Power Synapse Device. IEEE Transactions on Nanotechnology. 2025. https://doi.org/10.1109/tnano.2025.3595532