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Study on the Characteristics and Mechanism of High-Voltage 4H-SiC Dual-Mode Composite Transistor (DCT)

Lei Guan; Cailin Wang

Published
Publisher
IEEE
Journal / collection
2024 3rd International Symposium on Semiconductor and Electronic Technology (ISSET)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/isset62871.2024.10779945

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Lei Guan; Cailin Wang. Study on the Characteristics and Mechanism of High-Voltage 4H-SiC Dual-Mode Composite Transistor (DCT). 2024 3rd International Symposium on Semiconductor and Electronic Technology (ISSET). 2024-08-23. https://doi.org/10.1109/isset62871.2024.10779945

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