Reducing turn-Off loss by suppressing Back-Side parasitic npn Transistor in Single-Back and Double-Front Gate-Controlled IGBT
Yusuke Kobayashi; Munetoshi Fukui; Tomoko Matsudai; Takuya Saraya; Kazuo Itou; Toshihiko Takakura; Shinichi Suzuki; Tatsunori Sakano; Takato Yamamoto; Tomoaki Inokuchi; Ryohei Gejo; Kenya Kobayashi; Kazuto Takao; Toshiro Hiramoto
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/ispsd59661.2024.10579631
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Yusuke Kobayashi; Munetoshi Fukui; Tomoko Matsudai; Takuya Saraya; Kazuo Itou; Toshihiko Takakura; Shinichi Suzuki; Tatsunori Sakano; Takato Yamamoto; Tomoaki Inokuchi; Ryohei Gejo; Kenya Kobayashi; Kazuto Takao; Toshiro Hiramoto. Reducing turn-Off loss by suppressing Back-Side parasitic npn Transistor in Single-Back and Double-Front Gate-Controlled IGBT. 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD). 2024-06-02. https://doi.org/10.1109/ispsd59661.2024.10579631