Skip to content
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Journal article

Design and analysis of a vertically extended gate field effect transistor (VEG-FET)-based hydrogen gas sensor: a comprehensive modeling and simulation approach

Pramod Martha; Mayank Kohli; Rahul Kumar; Santosh Kumar Behera

Published
Publisher
Royal Society of Chemistry (RSC)
Journal / collection
Journal of Materials Chemistry C
Research area
Semiconductors
Source type
Journal article
DOI
10.1039/d4tc04574b

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Pramod Martha; Mayank Kohli; Rahul Kumar; Santosh Kumar Behera. Design and analysis of a vertically extended gate field effect transistor (VEG-FET)-based hydrogen gas sensor: a comprehensive modeling and simulation approach. Journal of Materials Chemistry C. 2025. https://doi.org/10.1039/d4tc04574b

Download RIS