Polarity Control in Doped Silicon Junctionless Nanowire Transistor for Sensing Application
S. Ghosh; A. Echresh; M. B. Khan; D. Bhattacharya; U. Kentsch; S. Prucnal; V. Vardhan; S. Biswas; S. Hellebust; J. Wenger; J. D. Holmes; A. Erbe; Y. M. Georgiev
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 Device Research Conference (DRC)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/drc61706.2024.10605574
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Cite this source
S. Ghosh; A. Echresh; M. B. Khan; D. Bhattacharya; U. Kentsch; S. Prucnal; V. Vardhan; S. Biswas; S. Hellebust; J. Wenger; J. D. Holmes; A. Erbe; Y. M. Georgiev. Polarity Control in Doped Silicon Junctionless Nanowire Transistor for Sensing Application. 2024 Device Research Conference (DRC). 2024-06-24. https://doi.org/10.1109/drc61706.2024.10605574