AlGaN/GaN heterojunction-structure-based junctionless transistor with outstanding analog/RF parameters: a numerical simulation study
Ali Shamsaee; Ahmad Olamaei; Amir Amirabadi
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Journal of the Korean Physical Society
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1007/s40042-024-01269-3
The original publisher provides the full text and its access options.
Cite this source
Ali Shamsaee; Ahmad Olamaei; Amir Amirabadi. AlGaN/GaN heterojunction-structure-based junctionless transistor with outstanding analog/RF parameters: a numerical simulation study. Journal of the Korean Physical Society. 2025-01-06. https://doi.org/10.1007/s40042-024-01269-3