A normally off high-voltage InGaZnO transistor with drain offset region modulated by an InZnO layer
Chenyang Huang; Jun Zhang; Jiafei Yao; Man Li; Kemeng Yang; Maolin Zhang; Yufeng Guo
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0193166
The original publisher provides the full text and its access options.
Cite this source
Chenyang Huang; Jun Zhang; Jiafei Yao; Man Li; Kemeng Yang; Maolin Zhang; Yufeng Guo. A normally off high-voltage InGaZnO transistor with drain offset region modulated by an InZnO layer. Applied Physics Letters. 2024-08-05. https://doi.org/10.1063/5.0193166