A Novel β-Ga 2 O 3 -Based Enhancement-Mode Transistor Combining Heterojunction Gate and Fin Shaped Gate
Yu Shao; Yunlong He; Xiaoli Lu; Songyao Wang; Xuefeng Zheng; Xiaohua Ma; Yue Hao
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/icsict62049.2024.10831213
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Cite this source
Yu Shao; Yunlong He; Xiaoli Lu; Songyao Wang; Xuefeng Zheng; Xiaohua Ma; Yue Hao. A Novel β-Ga 2 O 3 -Based Enhancement-Mode Transistor Combining Heterojunction Gate and Fin Shaped Gate. 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). 2024-10-22. https://doi.org/10.1109/icsict62049.2024.10831213