30‐2: Hydrogen Contents Controlled Silicon Nitride Passivation Layer for Highly Reliable IGZO Thin Film Transistor
Bokyoung Lee; Yongil Kim; Jungho Bang; Seung Hee Nam; Ji Yong Noh; Kwon-Shik Park; Soo Young Yoon
- Published
- Publisher
- Wiley
- Journal / collection
- SID Symposium Digest of Technical Papers
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/sdtp.17538
The original publisher provides the full text and its access options.
Cite this source
Bokyoung Lee; Yongil Kim; Jungho Bang; Seung Hee Nam; Ji Yong Noh; Kwon-Shik Park; Soo Young Yoon. 30‐2: Hydrogen Contents Controlled Silicon Nitride Passivation Layer for Highly Reliable IGZO Thin Film Transistor. SID Symposium Digest of Technical Papers. 2024-06. https://doi.org/10.1002/sdtp.17538