Vertical gate-all-around nanowire transistor: Analysis of non-ideal device features for variability reduction
Yiqi Sun; Xintong Zhang
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Micro and Nanostructures
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.micrna.2026.208815
The original publisher provides the full text and its access options.
Cite this source
Yiqi Sun; Xintong Zhang. Vertical gate-all-around nanowire transistor: Analysis of non-ideal device features for variability reduction. Micro and Nanostructures. 2026-10. https://doi.org/10.1016/j.micrna.2026.208815