Nanostructured h-WO₃-Based Ionologic Gates with Enhanced Rectification and Transistor Functionality
Przemysław Galek; Ahmed Bahrawy; Christin Gellrich; Nick Niese; Mohamed Abdullah; Martin Hantusch; Julia Grothe; Stefan Kaskel
- Published
- Publisher
- American Chemical Society (ACS)
- Research area
- Semiconductors
- Source type
- Preprint / posted paper
- DOI
- 10.26434/chemrxiv-2025-3c9s0
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Cite this source
Przemysław Galek; Ahmed Bahrawy; Christin Gellrich; Nick Niese; Mohamed Abdullah; Martin Hantusch; Julia Grothe; Stefan Kaskel. Nanostructured h-WO₃-Based Ionologic Gates with Enhanced Rectification and Transistor Functionality. American Chemical Society (ACS). 2025-02-11. https://doi.org/10.26434/chemrxiv-2025-3c9s0