Low Turn-Off Loss Lateral Insulated Gate Bipolar Transistor With Double Deep P-Regions
Kaiwei Dai; Jie Wei; Quan Zhou; Kemeng Yang; Jinlong Lu; Xindi Liu; Zhaoji Li; Bo Zhang; Xiaorong Luo
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2024.3478170
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Cite this source
Kaiwei Dai; Jie Wei; Quan Zhou; Kemeng Yang; Jinlong Lu; Xindi Liu; Zhaoji Li; Bo Zhang; Xiaorong Luo. Low Turn-Off Loss Lateral Insulated Gate Bipolar Transistor With Double Deep P-Regions. IEEE Transactions on Electron Devices. 2024-12. https://doi.org/10.1109/ted.2024.3478170