Effect of Gate Structure on the Performances of Lateral AlGaN/GaN High-Electron-Mobility Avalanche-Transit-Time Transistor
Yang Dai; Leiyu Gao; Yukun Li; Jing Zuo; Yue Zhang; Wu Zhao
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/tcad.2024.3478091
The original publisher provides the full text and its access options.
Cite this source
Yang Dai; Leiyu Gao; Yukun Li; Jing Zuo; Yue Zhang; Wu Zhao. Effect of Gate Structure on the Performances of Lateral AlGaN/GaN High-Electron-Mobility Avalanche-Transit-Time Transistor. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 2025-04. https://doi.org/10.1109/tcad.2024.3478091