Ultrawide Bandgap AlN Trench Metal-Oxide-Semiconductor Transistors (MOSFETs) on Single-Crystal AlN Substrates
Bingcheng Da; Dinusha Herath Mudiyanselage; Dawei Wang; Ziyi He; Junzhe Xie; Houqiang Fu
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Materials for Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/tmat.2025.3601062
The original publisher provides the full text and its access options.
Cite this source
Bingcheng Da; Dinusha Herath Mudiyanselage; Dawei Wang; Ziyi He; Junzhe Xie; Houqiang Fu. Ultrawide Bandgap AlN Trench Metal-Oxide-Semiconductor Transistors (MOSFETs) on Single-Crystal AlN Substrates. IEEE Transactions on Materials for Electron Devices. 2025. https://doi.org/10.1109/tmat.2025.3601062