2D ferroelectric AgInP 2 Se 6 for Ultra‐Steep Slope Transistor with SS Below 10 mV Decade −1
Yujue Yang; Zihao Liu; Xueting Liu; Huafeng Dong; Xin Zhang; Juehan Yang; Fugen Wu; Jingbo Li; Nengjie Huo
- Published
- Publisher
- Wiley
- Journal / collection
- Advanced Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/aelm.202400685
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Cite this source
Yujue Yang; Zihao Liu; Xueting Liu; Huafeng Dong; Xin Zhang; Juehan Yang; Fugen Wu; Jingbo Li; Nengjie Huo. 2D ferroelectric AgInP 2 Se 6 for Ultra‐Steep Slope Transistor with SS Below 10 mV Decade −1. Advanced Electronic Materials. 2025-02-22. https://doi.org/10.1002/aelm.202400685