Impact of 12nm FinFET Technology Variations on TID Effects: A Comparative Study of GF 12LP and 12LP+ at the Transistor Level
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Aldo Vidana; USDOE National Nuclear Security Administration (NNSA); Nathaniel Dodds; Robert Nowlin; Philip Oldiges; Keshab Sapkota; Trace Wallace; Brian Dodd; Jenny Xiong; Jeffrey Kauppila; Lloyd Massengill; Aymeric Privat; Hugh Barnaby
- Published
- Publisher
- Office of Scientific and Technical Information (OSTI)
- Research area
- Semiconductors
- Source type
- Report
- DOI
- 10.2172/2585996
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Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Aldo Vidana; USDOE National Nuclear Security Administration (NNSA); Nathaniel Dodds; Robert Nowlin; Philip Oldiges; Keshab Sapkota; Trace Wallace; Brian Dodd; Jenny Xiong; Jeffrey Kauppila; Lloyd Massengill; Aymeric Privat; Hugh Barnaby. Impact of 12nm FinFET Technology Variations on TID Effects: A Comparative Study of GF 12LP and 12LP+ at the Transistor Level. Office of Scientific and Technical Information (OSTI). 2024-07-01. https://doi.org/10.2172/2585996