Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact
Chengzhi Yang; Cheng Jiang; Wencheng Niu; Dandan Hao; Hao Huang; Houqiang Fu; Jinshui Miao; Xingqiang Liu; Xuming Zou; Fukai Shan; Zhenyu Yang
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0174509
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Cite this source
Chengzhi Yang; Cheng Jiang; Wencheng Niu; Dandan Hao; Hao Huang; Houqiang Fu; Jinshui Miao; Xingqiang Liu; Xuming Zou; Fukai Shan; Zhenyu Yang. Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact. Applied Physics Letters. 2024-02-12. https://doi.org/10.1063/5.0174509