Simulation study of a novel GaN on Si quasi-vertical reverse-conducting insulated gate bipolar transistor
Wen Zhao; Peng Zhang; Jiarui Xu; Jiale Du; Bin Hou; Jiejie Zhu; Xiaohua Ma; Yue Hao
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Semiconductor Science and Technology
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1361-6641/ad895a
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Cite this source
Wen Zhao; Peng Zhang; Jiarui Xu; Jiale Du; Bin Hou; Jiejie Zhu; Xiaohua Ma; Yue Hao. Simulation study of a novel GaN on Si quasi-vertical reverse-conducting insulated gate bipolar transistor. Semiconductor Science and Technology. 2025-01-29. https://doi.org/10.1088/1361-6641/ad895a