A 0.75V 10nm FinField-Effect Transistor Based Hybrid Self Controlled PreCharge Free Content Addressable Memory for Low Standby Power Applications
Arulpriya Shanmugam; Kumar Ponnusamy
- Published
- Publisher
- Informa UK Limited
- Journal / collection
- International Journal of Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1080/00207217.2024.2312558
The original publisher provides the full text and its access options.
Cite this source
Arulpriya Shanmugam; Kumar Ponnusamy. A 0.75V 10nm FinField-Effect Transistor Based Hybrid Self Controlled PreCharge Free Content Addressable Memory for Low Standby Power Applications. International Journal of Electronics. 2024-02-14. https://doi.org/10.1080/00207217.2024.2312558