Highly Reliable Hydrogen-Doped Polycrystalline Indium Oxide Top-Gate Thin-Film Transistor (InO x :H TFT) with Hydrogen-Free SiO 2 Gate Insulator and Boron Implanted Source and Drain Regions
Mir Mutakabbir Alom; Motoki Ando; Yoshihiro Sato; Takafumi Kambe; Tsutomu Satoyoshi; Toshimasa Ui; Keisuke Yasuta; Yuya Yamane; Junichi Tatemichi; Mamoru Furuta
- Published
- Publisher
- International Display Workshops General Incorporated Association
- Journal / collection
- Proceedings of the International Display Workshops
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.36463/idw.2024.0169
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Mir Mutakabbir Alom; Motoki Ando; Yoshihiro Sato; Takafumi Kambe; Tsutomu Satoyoshi; Toshimasa Ui; Keisuke Yasuta; Yuya Yamane; Junichi Tatemichi; Mamoru Furuta. Highly Reliable Hydrogen-Doped Polycrystalline Indium Oxide Top-Gate Thin-Film Transistor (InO x :H TFT) with Hydrogen-Free SiO 2 Gate Insulator and Boron Implanted Source and Drain Regions. Proceedings of the International Display Workshops. 2024-12-04. https://doi.org/10.36463/idw.2024.0169