A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip Complementary Logic Circuits
Haochen Wang; Kuangli Chen; Ning Yang; Jianggen Zhu; Enchuan Duan; Shuting Huang; Yishang Zhao; Bo Zhang; Qi Zhou
- Published
- Publisher
- MDPI AG
- Journal / collection
- Electronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/electronics13040729
The original publisher provides the full text and its access options.
Cite this source
Haochen Wang; Kuangli Chen; Ning Yang; Jianggen Zhu; Enchuan Duan; Shuting Huang; Yishang Zhao; Bo Zhang; Qi Zhou. A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip Complementary Logic Circuits. Electronics. 2024-02-10. https://doi.org/10.3390/electronics13040729