Robust Pareto Transistor Sizing of GaN HEMTs for Millimeter-Wave Applications
Rafael Perez Martinez; Stephen Boyd; Srabanti Chowdhury
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Access
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/access.2025.3543787
The original publisher provides the full text and its access options.
Cite this source
Rafael Perez Martinez; Stephen Boyd; Srabanti Chowdhury. Robust Pareto Transistor Sizing of GaN HEMTs for Millimeter-Wave Applications. IEEE Access. 2025. https://doi.org/10.1109/access.2025.3543787