Analysis of Geometric Parameter Variation Effect on Electrostatic Characteristics of 3D Double Gate Junctionless Transistor
- Published
- Publisher
- United Scientific Group
- Journal / collection
- NanoWorld Journal
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.17756/nwj.2024-s1-028
The original publisher provides the full text and its access options.
Cite this source
United Scientific Group. Analysis of Geometric Parameter Variation Effect on Electrostatic Characteristics of 3D Double Gate Junctionless Transistor. NanoWorld Journal. 2024-03-15. https://doi.org/10.17756/nwj.2024-s1-028