Terbium oxide as high dielectric constant passivation layer for silicon-based metal-oxide-semiconductor capacitor
Songhua Zhang; Way Foong Lim
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Ceramics International
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.ceramint.2024.12.223
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Cite this source
Songhua Zhang; Way Foong Lim. Terbium oxide as high dielectric constant passivation layer for silicon-based metal-oxide-semiconductor capacitor. Ceramics International. 2025-03. https://doi.org/10.1016/j.ceramint.2024.12.223