First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding
Hanchao Li; Hanlin Xie; Yue Wang; Lekina Yulia; Kumud Ranjan; Navab Singh; Surasit Chung; Kenneth E. Lee; Subramaniam Arulkumaran; Geok Ing Ng
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (a)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssa.202300953
The original publisher provides the full text and its access options.
Cite this source
Hanchao Li; Hanlin Xie; Yue Wang; Lekina Yulia; Kumud Ranjan; Navab Singh; Surasit Chung; Kenneth E. Lee; Subramaniam Arulkumaran; Geok Ing Ng. First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding. physica status solidi (a). 2024-05-15. https://doi.org/10.1002/pssa.202300953