Capacitance modeling, simulation and RF characterization of horizontal floating gate field effect transistor (H-FGFET) for gas sensing application
Divya Babbar; Neha Garg; Sneha Kabra
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Engineering Research Express
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/2631-8695/ad51d2
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Cite this source
Divya Babbar; Neha Garg; Sneha Kabra. Capacitance modeling, simulation and RF characterization of horizontal floating gate field effect transistor (H-FGFET) for gas sensing application. Engineering Research Express. 2024-06-01. https://doi.org/10.1088/2631-8695/ad51d2