Improvement of Amorphous InGaZnO Thin-Film Transistor Reliability and Electrical Performance Using ALD SiO 2 Interfacial Layer on PECVD SiO 2 Gate Insulator
Taeho Lee; Saeroonter Oh
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2024.3355025
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Cite this source
Taeho Lee; Saeroonter Oh. Improvement of Amorphous InGaZnO Thin-Film Transistor Reliability and Electrical Performance Using ALD SiO 2 Interfacial Layer on PECVD SiO 2 Gate Insulator. IEEE Transactions on Electron Devices. 2024-03. https://doi.org/10.1109/ted.2024.3355025