A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel for 3-D Integrated Devices
Kaito Hikake; Zhuo Li; Junxiang Hao; Chitra Pandy; Takuya Saraya; Toshiro Hiramoto; Takanori Takahashi; Mutsunori Uenuma; Yukiharu Uraoka; Masaharu Kobayashi
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2024.3370534
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Cite this source
Kaito Hikake; Zhuo Li; Junxiang Hao; Chitra Pandy; Takuya Saraya; Toshiro Hiramoto; Takanori Takahashi; Mutsunori Uenuma; Yukiharu Uraoka; Masaharu Kobayashi. A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel for 3-D Integrated Devices. IEEE Transactions on Electron Devices. 2024-04. https://doi.org/10.1109/ted.2024.3370534