AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Dual-Metal Gate Architecture for Biosensing Applications
T. Suresh Babu; U. Saravanakumar
- Published
- Publisher
- American Scientific Publishers
- Journal / collection
- Journal of Nanoelectronics and Optoelectronics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1166/jno.2024.3683
The original publisher provides the full text and its access options.
Cite this source
T. Suresh Babu; U. Saravanakumar. AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Dual-Metal Gate Architecture for Biosensing Applications. Journal of Nanoelectronics and Optoelectronics. 2024-11-01. https://doi.org/10.1166/jno.2024.3683