High-responsivity, high-detectivity, broadband infrared photodetector based on MoS2/BP/MoS2 junction field-effect transistor
Xinrui Shu; Jianfeng Wu; Fan Zhong; Xinlei Zhang; Qiang Fu; Xu Han; Jialin Zhang; Junpeng Lu; Zhenhua Ni
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0205803
The original publisher provides the full text and its access options.
Cite this source
Xinrui Shu; Jianfeng Wu; Fan Zhong; Xinlei Zhang; Qiang Fu; Xu Han; Jialin Zhang; Junpeng Lu; Zhenhua Ni. High-responsivity, high-detectivity, broadband infrared photodetector based on MoS2/BP/MoS2 junction field-effect transistor. Applied Physics Letters. 2024-04-29. https://doi.org/10.1063/5.0205803