First-principles predictions: exploring semiconductor properties of BeXAs2 (X=Ge and Sn) for photovoltaic applications
Institute of Sciences, University Centre of Tipaza, Algeria; Y. Megdoud; L. Tairi; LPR Laboratory, Département of Physics, Faculty of Science, Badji Mokhtar University, Annaba, Algeria; Y. Benkrima; Ecole Normale Supérieure de Ouargla, 30000 Ouargla, Algeria; R. Meneceur; Unit for the Development of Renewable Energies in Arid Zones (UDERZA), El Oued University, Algeria; A. Lakel; Material Science Department, Faculty of Science, Biskra University, Biskra 07000, Algeria; S. Ghemid; LPR Laboratory, Département of Physics, Faculty of Science, Badji Mokhtar University, Annaba, Algeria; H. Meradji; LPR Laboratory, Département of Physics, Faculty of Science, Badji Mokhtar University, Annaba, Algeria; F. Baira; Department of sciences and technology, Faculty of technology, University of Batna 2, Alleys 53, Constantine Avenue. Fésdis, Batna 05078, Algeria
- Published
- Publisher
- Virtual Company of Physics
- Journal / collection
- Journal of Ovonic Research
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.15251/jor.2024.204.435
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Cite this source
Institute of Sciences, University Centre of Tipaza, Algeria; Y. Megdoud; L. Tairi; LPR Laboratory, Département of Physics, Faculty of Science, Badji Mokhtar University, Annaba, Algeria; Y. Benkrima; Ecole Normale Supérieure de Ouargla, 30000 Ouargla, Algeria; R. Meneceur; Unit for the Development of Renewable Energies in Arid Zones (UDERZA), El Oued University, Algeria; A. Lakel; Material Science Department, Faculty of Science, Biskra University, Biskra 07000, Algeria; S. Ghemid; LPR Laboratory, Département of Physics, Faculty of Science, Badji Mokhtar University, Annaba, Algeria; H. Meradji; LPR Laboratory, Département of Physics, Faculty of Science, Badji Mokhtar University, Annaba, Algeria; F. Baira; Department of sciences and technology, Faculty of technology, University of Batna 2, Alleys 53, Constantine Avenue. Fésdis, Batna 05078, Algeria. First-principles predictions: exploring semiconductor properties of BeXAs2 (X=Ge and Sn) for photovoltaic applications. Journal of Ovonic Research. 2024-09. https://doi.org/10.15251/jor.2024.204.435