Sn-doped n-type amorphous gallium oxide semiconductor with energy bandgap of 4.9 eV
Dahee Seo; Jongsu Baek; Sunjae Kim; Byung Jin Cho; Wan Sik Hwang
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Materials Science in Semiconductor Processing
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.mssp.2023.107922
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Cite this source
Dahee Seo; Jongsu Baek; Sunjae Kim; Byung Jin Cho; Wan Sik Hwang. Sn-doped n-type amorphous gallium oxide semiconductor with energy bandgap of 4.9 eV. Materials Science in Semiconductor Processing. 2024-01. https://doi.org/10.1016/j.mssp.2023.107922