Field-effect transistor based on reduced graphene oxide � porous silicon structure for application in selective gas sensors
I. Olenych; Yu. Horbenko; M. Pavlyk
- Published
- Publisher
- Ivan Franko National University of Lviv
- Journal / collection
- Visnyk of the Lviv University. Series Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.30970/vph.61.2024.42
The original publisher provides the full text and its access options.
Cite this source
I. Olenych; Yu. Horbenko; M. Pavlyk. Field-effect transistor based on reduced graphene oxide � porous silicon structure for application in selective gas sensors. Visnyk of the Lviv University. Series Physics. 2024. https://doi.org/10.30970/vph.61.2024.42