A Low-Dark-Current and High-Responsivity Ultraviolet Photodetector Based on a Recessed-Gate AlGaN/GaN Enhanced-Type High-Electron-Mobility Transistor
Yu Wang; Kunlin Cai; Chenxi Ye; Chuankai Liu; Peiyuan Guo; Hao Qian; Hangzan Liu; Zhaoqiang Zheng; Huzi Xu; Wei Gao; Xiaozhou Wang; Jingbo Li; Yuan Li
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsaelm.4c00451
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Cite this source
Yu Wang; Kunlin Cai; Chenxi Ye; Chuankai Liu; Peiyuan Guo; Hao Qian; Hangzan Liu; Zhaoqiang Zheng; Huzi Xu; Wei Gao; Xiaozhou Wang; Jingbo Li; Yuan Li. A Low-Dark-Current and High-Responsivity Ultraviolet Photodetector Based on a Recessed-Gate AlGaN/GaN Enhanced-Type High-Electron-Mobility Transistor. ACS Applied Electronic Materials. 2024-05-16. https://doi.org/10.1021/acsaelm.4c00451