Unraveling the role of edge doping in reducing the critical voltage for semiconductor-to-half-metal transition in graphene nanoribbons
Lin-yu Tan; De-Liang Bao; Lei Gao
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Chinese Journal of Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.cjph.2026.05.028
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Cite this source
Lin-yu Tan; De-Liang Bao; Lei Gao. Unraveling the role of edge doping in reducing the critical voltage for semiconductor-to-half-metal transition in graphene nanoribbons. Chinese Journal of Physics. 2026-10. https://doi.org/10.1016/j.cjph.2026.05.028