Influence of Doping Engineering in 1 μm Drift Layer Quasi‐Vertical Fin Field‐Effect Transistor for Achieving >139 V Breakdown Voltage
Ancy Michel; Binola K. Jebalin I. V.; S. Angen Franklin; Sylvia Juliet Rani; Angelin Delighta A.; D. Nirmal
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (a)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssa.202400137
The original publisher provides the full text and its access options.
Cite this source
Ancy Michel; Binola K. Jebalin I. V.; S. Angen Franklin; Sylvia Juliet Rani; Angelin Delighta A.; D. Nirmal. Influence of Doping Engineering in 1 μm Drift Layer Quasi‐Vertical Fin Field‐Effect Transistor for Achieving >139 V Breakdown Voltage. physica status solidi (a). 2024-07-25. https://doi.org/10.1002/pssa.202400137