Parasitic Transistor with Hole Injection Current Modeling of AlGaN/GaN Ridge HEMTs
Hitoshi Aoki; Naotaka Kuroda; Atsushi Yamaguchi; Ken Nakahara
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 International Conference on Electrical, Computer and Energy Technologies (ICECET
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/icecet61485.2024.10698174
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Cite this source
Hitoshi Aoki; Naotaka Kuroda; Atsushi Yamaguchi; Ken Nakahara. Parasitic Transistor with Hole Injection Current Modeling of AlGaN/GaN Ridge HEMTs. 2024 International Conference on Electrical, Computer and Energy Technologies (ICECET. 2024-07-25. https://doi.org/10.1109/icecet61485.2024.10698174